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| DG406BP25 DG406BP25 Gate Turn-off Thyristor Replaces March 1998 version, DS4090-2.3 DS4090-3.0 January 2000 APPLICATIONS s Variable speed A.C. motor drive inverters (VSD-AC). s Uninterruptable Power Supplies s High Voltage Converters. s Choppers. s Welding. s Induction Heating. s DC/DC Converters. KEY PARAMETERS 1000A ITCM VDRM 2500V 400A IT(AV) dVD/dt 1000V/s 300A/s diT/dt FEATURES s Double Side Cooling. s High Reliability In Service. s High Voltage Capability. s Fault Protection Without Fuses. s High Surge Current Capability. s Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements. Outline type code: P. See Package Details for further information. VOLTAGE RATINGS Type Number Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage VDRM VRRM V V 2500 16 Conditions DG406BP25 Tvj = 125oC, IDM = 50mA, IRRM = 50mA CURRENT RATINGS Symbol ITCM IT(AV) IT(RMS) Parameter Conditions Max. 1000 400 630 Units A A A Repetitive peak controllable on-state current VD = VDRM, Tj = 125oC, diGQ/dt = 30A/s, Cs = 1.0F Mean on-state current RMS on-state current THS = 80oC. Double side cooled. Half sine 50Hz. THS = 80oC. Double side cooled. Half sine 50Hz. 1/19 DG406BP25 SURGE RATINGS Symbol ITSM I2t diT/dt Parameter Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Conditions 10ms half sine. Tj = 125oC 10ms half sine. Tj =125oC VD = 2000V, IT = 1000A, Tj = 125oC, IFG 30A, Rise time > 1.0s To 66% VDRM; RGK 1.5, Tj = 125oC dVD/dt Rate of rise of off-state voltage To 66% VDRM; VRG = -2V, Tj = 125oC Peak stray inductance in snubber circuit IT = 1000A, VD = VDRM, Tj = 125oC, diGQ/dt = 30A/s, Cs = 1.0F 1000 200 V/s nH Max. 8.0 0.32 x 106 300 500 Units kA A2s A/s V/s LS GATE RATINGS Symbol VRGM IFGM PFG(AV) PRGM diGQ/dt tON(min) tOFF(min) Parameter Peak reverse gate voltage Peak forward gate current Average forward gate power Peak reverse gate power Rate of rise of reverse gate current Minimum permissable on time Minimum permissable off time Conditions This value maybe exceeded during turn-off Min. 20 15 20 100 Max. 16 70 10 15 60 Units V A W kW A/s s s THERMAL RATINGS AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-hs) DC thermal resistance - junction to heatsink surface Anode side cooled Cathode side cooled Rth(c-hs) Tvj TOP/Tstg Contact thermal resistance Virtual junction temperature Operating junction/storage temperature range Clamping force Clamping force 12.0kN With mounting compound per contact Min. -40 11.0 Max. 0.041 0.07 0.1 0.009 125 125 15.0 Units o C/W C/W C/W C/W o o o o C C o kN 2/19 DG406BP25 CHARACTERISTICS Tj = 125oC unless stated otherwise Symbol VTM IDM IRRM VGT IGT IRGM EON td tr EOFF tgs tgf tgq QGQ QGQT IGQM On-state voltage Peak off-state current Peak reverse current Gate trigger voltage Gate trigger current Reverse gate cathode current Turn-on energy Delay time Rise time Turn-off energy Storage time Fall time Gate controlled turn-off time Turn-off gate charge Total turn-off gate charge Peak reverse gate current IT = 1000A, VDM = 2500V Snubber Cap Cs = 1.0F, diGQ/dt = 30A/s Parameter Conditions At 1000A peak, IG(ON) = 4A d.c. VDRM = 2500V, VRG = 0V At VRRM VD = 24V, IT = 100A, Tj = 25oC VD = 24V, IT = 100A, Tj = 25oC VRGM = 16V, No gate/cathode resistor VD = 2000V IT = 1000A, dIT/dt = 300A/s IFG = 30A, rise time 1.0s Min. Max. 2.5 50 50 1.0 1.5 50 1040 1.5 3.0 2300 14.0 1.5 15.5 3000 6000 420 Units V mA mA V A mA mJ s s mJ s s s C C A 3/19 DG406BP25 CURVES 2.0 4.0 Gate trigger voltage VGT - (V) 1.5 3.0 Gate trigger current IGT - (A) 1.0 2.0 VGT 0.5 IGT 0 -50 -25 0 25 50 75 100 Junction temperature Tj - (C) 125 0 150 1.0 Fig.1 Maximum gate trigger voltage/current vs junction temperature 4.0 Instantaneous on-state current ITM - (kA) 3.0 Tj = 25C Tj = 125C 2.0 1.0 Maximum permissible turn-off current ITCM - (kA) Measured under pulse conditions. IG(ON) = 4.0A Half sine wave 10ms 1.5 1.0 0.5 Conditions: Tj = 125C, VDM = VDRM, dIGQ/dt = 30A/s 2.0 0 1.0 2.0 3.0 4.0 Instantaneous on-state voltage VTM - (V) Fig.2 On-state characteristics 5.0 0 0.25 0.50 0.75 1.00 1.25 1.5 1.75 Snubber capacitance CS - (F) Fig.3 Maximum dependence of ITCM on CS 4/19 DG406BP25 0.05 0.04 Thermal impedance - C/W dc 0.03 0.02 0.01 0 0.001 0.01 0.1 Time - (s) 1.0 10 100 Fig.4 Maximum (limit) transient thermal impedance - double side cooled Peak half sine wave on-state current - (kA) 20 15 10 5 0 0.0001 0.001 0.01 Pulse duration - (s) 0.1 1.0 Fig.5 Surge (non-repetitive) on-state current vs time 5/19 DG406BP25 1500 Mean on-state power dissipation - (W) Conditions: IG(ON) = 4.0A 180 120 60 30 dc 1000 500 0 0 200 400 600 Mean on-state current IT(AV) - (A) 70 80 90 100 120 Maximum permissible case temperature - (C) 130 Fig.6 Steady state rectangluar wave conduction loss - double side cooled Mean on-state power dissipation - (W) 1500 Conditions: IG(ON) = 4.0A 1000 180 120 90 60 30 500 0 0 100 200 300 400 500 600 Mean on-state current IT(AV) - (A) 70 80 90 100 120 130 Maximum permissible case temperature - (C) Fig.7 Steady state sinusoidal wave conduction loss - double side cooled 6/19 DG406BP25 1000 Turn-on energy loss EON - (mJ) Conditions: Tj = 25C, IFGM = 30A, CS = 1.0F, dI/dt = 300A/s, 750 dIFG/dt = 30A/s VD = 2000V VD = 1500V 500 VD = 1000V 250 0 0 250 500 750 1000 On-state current IT - (A) Fig.8 Turn-on energy vs on-state current 1250 1500 2000 Turn-on energy loss EON - (mJ) 1500 Conditions: Tj = 25C, IT = 1000A, CS = 1.0F, RS = 10 Ohms dI/dt = 300A/s, dIFG/dt = 30A/s 1000 VD = 2000V VD = 1500V 500 VD = 1000V 0 0 20 40 60 80 Peak forward gate current IFGM - (A) FIG 9 TURN ON ENERGY PEAK FORWARD Fig.9 Turn-on energy vs peak forward gate current 7/19 DG406BP25 1125 Conditions: 1000 Tj = 125C, IFGM = 30A, CS = 1.0F, RS = 10 Ohms, 875 dI /dt = 300A/s, T dIF/dt = 30A/s 750 625 500 375 250 125 0 VD = 1000V VD = 2000V Turn-on energy loss EON - (mJ) VD = 1500V 0 250 500 750 1000 On-state current IT - (A) Fig.10 Turn-on energy vs on-state current 1250 2500 1250 2000 Conditions: Tj = 125C, IT = 1000A, CS = 1.0F, RS = 10 Ohms dI/dt = 300A/s, dIFG/dt = 30A/s Turn-on energy loss EON - (mJ) 1500 Turn-on energy loss EON - (mJ) Conditions: IT = 1000A, Tj = 125C, CS = 1.0F 1000 RS = 10 Ohms IFGM = 30A, dIFG/dt = 30A/s 750 VD = 2000V 1000 VD = 2000V VD = 1500V 500 VD = 1500V 500 VD = 1000V 250 VD = 1000V 0 0 20 40 60 Peak forward gate current IFGM - (A) 80 0 100 200 300 Rate of rise of on-state current dIT/dt - (A/s) FIG 12 TURN ON ENERGY RATE OF 0 Fig.11 Turn-on energy vs peak forward gate current 8/19 Fig.12 Turn-on energy vs rate of rise of on-state current DG406BP25 4.0 Turn-on delay and rise time - (s) Conditions: Tj = 125C, IFGM = 30A, CS = 1.0F, VD = 2000V, RS = 10 Ohms, dIT/dt = 300A/s tr 3.0 2.0 td 1.0 0 0 250 500 750 1000 On-state current IT - (A) 1250 1500 Fig.13 Delay time & rise time vs turn-on current 5.0 Conditions: Tj = 125C, IT = 1000A, CS = 1.0F, RS = 10 Ohms, dI/dt = 300A/s, dIFG/dt = 30A/s, VD = 2000V Turn-on delay time and rise time - (s) 4.0 3.0 tr 2.0 td 1.0 20 40 60 80 Peak forward gate current IFGM - (A) FIG 14 DELAY TIME &time vsTIME forward gate current RISE peak s PEAK FORWARD Fig.14 Delay time & rise 0 0 9/19 DG406BP25 2000 Conditions: Tj = 25C, CS = 1.0F, dIGQ/dt = 30A/s VDRM 0.75x VDRM Turn-off energy loss EOFF - (mJ) 1500 1000 0.5x VDRM 500 0 0 250 500 750 1000 On-state current IT - (A) Fig.15 Turn-off energy vs on-state current 1250 1500 Turn-off energy per pulse EOFF - (mJ) 2000 Conditions: Tj = 25C, CS = 1.0F, IT = 1000A VDRM 1500 0.75x VDRM 1000 0.5x VDRM 500 0 10 Fig.16 Turn-off energy vs rate of rise of reverse gate current 20 30 40 50 Rate of rise of reverse gate current dIGQ/dt - (A/s) FIG 16 TURN OFF ENERGY RATE OF RISE OF 60 10/19 DG406BP25 2500 Conditions: Tj = 125C, CS = 1.0F, dIGQ/dt = 30A/s VDRM 2000 Turn-off energy loss EOFF - (mJ) 1500 0.75x VDRM 1000 0.5x VDRM 500 0 0 500 750 1000 1250 On-state current IT - (A) FIG 17 TURN OFF ENERGY ON STATE CURRENT Fig.17 Turn-off energy vs on-state current 250 1500 2500 VDRM Turn-off energy per pulse EOFF - (mJ) Conditions: 2000 Tj = 125C, CS = 1.0F, IT = 1000A 0.75x VDRM 1500 0.5x VDRM 1000 500 10 Fig.18 Turn-off energy loss vs rate of rise of reverse gate current 20 30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/s) FIG 18 TURN OFF ENERGY LOSS RATE OF RISE OF 11/19 DG406BP25 2500 Conditions: Tj = 125C, VDM = VDRM, dIGQ/dt = 30A/s Turn-off energy per pulse EOFF - (mJ) CS = 1.0F CS = 1.5F 2000 CS = 2.0F 1500 1000 CS = 0.5F 500 0 0 500 750 1000 1250 On-state current IT - (A) FIG 19 TURN OFF ENERGY ON STATE CURRENT Fig.19 Turn-off energy vs on-state current 250 1500 2.0 Conditions: CS = 1.0F, dIGQ/dt = 30A/s Tj = 125C 1.5 Gate fall tgf - (s) 1.0 Tj = 25C 0.5 0 0 250 500 750 1000 On-state current IT - (A) Fig.20 Gate fall time vs on-state current 1250 1500 12/19 DG406BP25 25 Conditions: CS = 1.0F, IT = 1000A Gate storage time tgs - (s) 20 15 Tj = 125C 10 Tj = 25C 5 10 20 30 40 50 Rate of rise of reverse gate current dIGQ/dt - (A/s) FIG 21 GATE STORAGE TIME RATE OF RISE OF Fig.21 Gate storage time vs rate of rise of reverse gate current 60 2.0 Conditions: CS = 1.0F, dIGQ/dt = 30A/s Tj = 125C Gate storage fall tgf - (s) 1.5 1.0 Tj = 25C 0.5 0 0 250 500 750 1000 1250 On-state current IT - (A) FIG 22 GATE FALL TIME ON STATE CURRENT Fig.22 Gate fall time vs on-state current 1500 13/19 DG406BP25 2.00 Conditions: CS = 1.0F, IT = 1000A 1.75 Gate fall time tgf - (s) 1.50 Tj = 125C 1.25 Tj = 25C 1.00 10 20 30 40 50 Rate of rise of reverse gate current dIGQ/dt - (A/s) FIG 23 GATE FALL TIME RATE OF RISE OF 60 Fig.23 Gate fall time vs rate of rise of reverse gate current 500 Peak reverse gate current IGQM - (A) Conditions: CS = 1.0F, dIGQ/dt = 30A/s Tj = 125C 400 Tj = 25C 300 200 100 0 250 500 750 1000 Turn-off current IT - (A) 1250 1500 Fig.24 Peak reverse gate current vs turn-off current 14/19 DG406BP25 500 Conditions: CS = 1.0F, IT = 1000A 450 Peak reverse gate current IGQM - (A) Tj = 125C Tj = 25C 400 350 300 250 10 20 30 40 50 Rate of rise of reverse gate current dIGQ/dt - (A/s) 60 Fig.25 Peak reverse gate current vs rate of rise of reversegate current 4000 Conditions: CS = 1.0F, dIGQ/dt = 30A/s Tj = 125C Total turn-off charge QGQ - (C) 3000 Tj = 25C 2000 1000 0 0 250 500 750 1000 On-state current IT - (A) Fig.26 Turn-off gate charge vs on-state current 1250 1500 15/19 DG406BP25 4000 Conditions: CS = 1.0F, IT = 1000A 3500 Turn-off gate charge QGQ - (C) 3000 Tj = 125C 2500 2000 Tj = 25C 1500 10 20 30 40 50 Rate of rise of reverse gate current dIGQ/dt - (A/s) 60 Fig.27 Turn-off gate charge vs rate of rise of reverse gate current Rate of rise of off-state voltage dV/dt - (V/s) 1000 VD = 1250V Tj = 125C 500 VD = 1650V 0 0.1 1.0 10 100 Gate cathode resistance RGK - (Ohms) 1000 Fig.28 Rate of rise of off-state voltage vs gate cathode resistance 16/19 DG406BP25 Anode voltage and current 0.9VD 0.9IT dVD/dt VD IT VD VDM 0.1VD td tgt tr VDP tgs tgf ITAIL dIFG/dt Gate voltage and current tgq IFG VFG IG(ON) 0.1IFG 0.1IGQ tw1 QGQ 0.5IGQM IGQM Recommended gate conditions: ITCM = 1000A IFG = 30A IG(ON) = 4A d.c. tw1(min) = 10s IGQM = 420A diGQ/dt = 30A/s QGQ = 3000C VRG(min) = 2V VRG(max) = 16V V(RG)BR VRG These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications. Fig.29 General switching waveforms 17/19 DG406BP25 PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes O3.6 0.1 x 1.95 0.05 deep Auxiliary cathode 20 Gate Cathode O51 nom O38 nom 18 nom O38 nom O56 max O57.5 max O63.5 max Anode Nominal weight: 350g Clamping force: 12kN 10% Lead length: 505mm Package outine type code: P ASSOCIATED PUBLICATIONS Title Calculating the junction temperature or power semiconductors GTO gate drive units Recommendations for clamping power semiconductors Use of V , r on-state characteristic TO T Application Note Number AN4506 AN4571 AN4839 AN5001 AN5177 Impoved gate drive for GTO series connections 18/19 27.0 25.5 DG406BP25 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has it's own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2000 Publication No. DS4090-3 Issue No. 3.0 January 2000 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 19/19 |
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